| 摘要 |
PURPOSE: A light emitting diode and manufacturing method thereof are provided to manufacture a light emitting diode with high external quantum efficiency by simple processes, thereby saving manufacturing costs. CONSTITUTION: A semiconductor buffer layer(102) is formed on a substrate(101). A first semiconductor layer(103) is formed on the semiconductor buffer layer. A light emitting area(104) is formed on the first semiconductor layer. A second semiconductor layer(105) is formed on the light emitting area. A transparent electrode(106) is formed on the second semiconductor layer.
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