发明名称 |
Non-volatile memory devices and methods of fabricating the same |
摘要 |
A memory device may include a switching device and a storage node coupled with the switching device. The storage node may include a first electrode, a second electrode, a data storage layer and at least one contact layer. The data storage layer may be disposed between the first electrode and the second electrode and may include a transition metal oxide or aluminum oxide. The at least one contact layer may be disposed at least one of above or below the data storage layer and may include a conductive metal oxide.
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申请公布号 |
US7936044(B2) |
申请公布日期 |
2011.05.03 |
申请号 |
US20060403902 |
申请日期 |
2006.04.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM DONG CHUL;YOO IN-KYEONG;LEE MYOUNG-JAE;SEO SUN-AE;BAEK IN-GYU;AHN SEUNG-EON;PARK BYOUNG-HO;CHA YOUNG-KWAN;PARK SANG-JIN |
分类号 |
H01L29/00 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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