发明名称 Plasma processing apparatus
摘要 A plasma processing apparatus is described and which includes a chamber having at least two processing stations which are separated by a wall. At least one channel is formed in the wall, and wherein the channel has a width to length ratio of less than about 1:3.
申请公布号 US7935186(B2) 申请公布日期 2011.05.03
申请号 US20060441290 申请日期 2006.05.24
申请人 ADVANCED MICRO-FABRICATION EQUIPMENT, INC. ASIA 发明人 QIAN QING
分类号 C23C16/00;C23F1/00;H01L21/306 主分类号 C23C16/00
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