发明名称 Solid-state imaging device
摘要 To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area.
申请公布号 US7936487(B2) 申请公布日期 2011.05.03
申请号 US20100958817 申请日期 2010.12.02
申请人 CANON KABUSHIKI KAISHA 发明人 YONEDA TOMOYA;SUGAWA SHIGETOSHI;KOIZUMI TORU;KOCHI TETSUNOBU
分类号 H04N1/04;H01L27/146;H01L27/148;H04N1/195;H04N5/335;H04N5/361;H04N5/369;H04N5/374;H04N9/07 主分类号 H04N1/04
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