发明名称 Wafer-level fabrication of lidded chips with electrodeposited dielectric coating
摘要 A method is provided for fabricating a unit including a semiconductor element such as a sensor unit, e.g., for optical imaging. A semiconductor element has plurality of conductive features exposed at the front surface and semiconductive or conductive material exposed at least one of the front and rear surfaces. At least some of the conductive features are insulated from the exposed semiconductive or conductive material. By electrodeposition, an insulative layer is formed to overlie the at least one of exposed semiconductive material or conductive material. Subsequently, a plurality of conductive contacts and a plurality of conductive traces are formed overlying the electrodeposited insulative layer, the conductive traces connecting the conductive features to the conductive contacts. The unit can be incorporated in a camera module having an optical element in registration with an imaging area of the semiconductor element.
申请公布号 US7935568(B2) 申请公布日期 2011.05.03
申请号 US20060590616 申请日期 2006.10.31
申请人 TESSERA TECHNOLOGIES IRELAND LIMITED 发明人 OGANESIAN VAGE;OVRUTSKY DAVID;ROSENSTEIN CHARLES;HABA BELGACEM;HUMPSTON GILES
分类号 H01L21/44;H01L21/48;H01L21/50 主分类号 H01L21/44
代理机构 代理人
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