发明名称 |
Method to stabilize carbon in Si1-x-yGexCy layers |
摘要 |
A method of providing a layer in a semiconductor device, wherein the layer includes Si1-x-yGexCy, and wherein the carbon in the layer is in a stable condition, includes preparing a silicon substrate; preparing a SiGeC precursor; forming a Si1-x-yGexCy layer on the silicon substrate from the precursor; forming a top silicon layer on the Si1-x-yGexCy layer; and completing the semiconductor device.
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申请公布号 |
US7935617(B2) |
申请公布日期 |
2011.05.03 |
申请号 |
US20040931327 |
申请日期 |
2004.08.31 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
TWEET DOUGLAS J. |
分类号 |
H01L21/20;C30B25/00;C30B29/10 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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