发明名称 Embossing printing for fabrication of organic field effect transistors and its integrated devices
摘要 A method of fabricating an organic field effect transistor (OFET) includes forming at least one OFET structure by ultraviolet (UV) transfer embossing printing, where, in an example embodiment, the method includes providing ink material on at least part of a patterned surface of a mold, where the mold 100 is then contacted on a coating of ultraviolet (UV) curable resin on a substrate so as to insert at least part of the ink material into the resin, the resin is then irradiated with UV light, and the mold is separated from the resin so as to transfer the ink material onto the substrate to form at least one OFET structure.
申请公布号 US7935566(B2) 申请公布日期 2011.05.03
申请号 US20080600151 申请日期 2008.05.14
申请人 NANYANG TECHNOLOGICAL UNIVERSITY 发明人 LI CHANG MING;CHAN MARY BEE ENG;ZHANG JUN
分类号 H01L51/40;H01L21/00 主分类号 H01L51/40
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