发明名称 |
Method for providing semiconductors having self-aligned ion implant |
摘要 |
A method is disclosed that provides a self-aligned nitrogen-implant particularly suited for a Junction Field Effect Transistor (JFET) semiconductor device preferably comprised of a silicon carbide (SiC). This self-aligned nitrogen-implant allows for the realization of durable and stable electrical functionality of high temperature transistors such as JFETs. The method implements the self-aligned nitrogen-implant having predetermined dimensions, at a particular step in the fabrication process, so that the SiC junction field effect transistors are capable of being electrically operating continuously at 500° C. for over 10,000 hours in an air ambient with less than a 10% change in operational transistor parameters.
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申请公布号 |
US7935601(B1) |
申请公布日期 |
2011.05.03 |
申请号 |
US20090584497 |
申请日期 |
2009.09.04 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF NATIONAL AERONAUTICS AND SPACE ADMINISTRATION |
发明人 |
NEUDECK PHILIP G. |
分类号 |
H01L21/336;H01L21/22;H01L21/331;H01L21/337;H01L21/38;H01L21/425 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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