发明名称 |
Advanced forming method and structure of local mechanical strained transistor |
摘要 |
Embodiments of the invention provide a semiconductor fabrication method and a structure for strained transistors. A method comprises forming a stressor layer over a MOS transistor. The stressor layer is selectively etched over the gate electrode, thereby affecting strain conditions within the MOSFET channel region. An NMOS transistor may have a tensile stressor layer, and a PMOS transistor may have compressive stressor layer.
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申请公布号 |
US7935587(B2) |
申请公布日期 |
2011.05.03 |
申请号 |
US20060450210 |
申请日期 |
2006.06.09 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN CHIEN-HAO;LEE TZE-LIANG |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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