发明名称 Image sensor and method for manufacturing the same
摘要 A method for manufacturing a sensor image may include forming a pixel array including a photodiode structure and an insulating film structure in an active area of a semiconductor substrate; forming a metal pad on the insulating film structure; forming a dielectric and/or etch stop film on the metal pad (and optionally over the pixel array); forming a protective layer on the dielectric and/or etch stop film; and forming a pad opening and a pixel opening by etching the protective layer.
申请公布号 US7935551(B2) 申请公布日期 2011.05.03
申请号 US20070998606 申请日期 2007.11.30
申请人 DONGBU HITEK CO., LTD. 发明人 IM KI SIK;HYUN WOO SEOK
分类号 H01L21/00;H01L27/146;H01L31/00;H01L31/0232 主分类号 H01L21/00
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