发明名称 Light-emitting diode, light-emitting diode substrate and production method of light-emitting diode
摘要 The light-emitting diode is a light-emitting diode including a light-converting material substrate and a semiconductor layer formed on the light-converting material substrate, wherein the light-converting material substrate includes a solidified body in which at least two or more oxide phases selected from a simple oxide and a complex oxide are formed continuously and three-dimensionally entangled with each other, at least one oxide phase in the solidified body comprises a metal element capable of emitting fluorescence, and the semiconductor layer includes a plurality of compound semiconductor layers and has at least a light-emitting layer capable of emitting visible light. A light-emitting diode substrate forms a semiconductor, ensuring that the crystal-structure matching with a semiconductor for the formation of a light-emitting diode is good, a good semiconductor layer with less defects can be formed, good-efficiency light emission can be obtained from a light-emitting layer formed in the semiconductor layer, uniform florescence can be emitted by light from the light-emitting layer in the semiconductor layer, and light can be efficiently out put; and a color unevenness-free light-emitting diode using the substrate.
申请公布号 US7935973(B2) 申请公布日期 2011.05.03
申请号 US20050665984 申请日期 2005.10.20
申请人 UBE INDUSTRIES, LTD. 发明人 MITANI ATSUYUKI;SAKATA SHIN-ICHI;FUJII ITSUHIRO
分类号 H01L33/00;H01L33/02;H01L33/26;H01L33/50 主分类号 H01L33/00
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