发明名称 |
Vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array |
摘要 |
A vertical transistor having a wrap-around-gate and a method of fabricating such a transistor. The wrap-around-gate (WAG) vertical transistors are fabricated by a process in which source, drain and channel regions of the transistor are automatically defined and aligned by the fabrication process, without photolithographic patterning.
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申请公布号 |
US7936000(B2) |
申请公布日期 |
2011.05.03 |
申请号 |
US20090417128 |
申请日期 |
2009.04.02 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
TANG SANH D.;BURKE ROBERT J.;SRINIVASAN ANAND |
分类号 |
H01L29/92;H01L27/10;H01L29/786 |
主分类号 |
H01L29/92 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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