发明名称 |
Nitride semiconductor light emitting diode |
摘要 |
A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.
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申请公布号 |
US7935970(B2) |
申请公布日期 |
2011.05.03 |
申请号 |
US20080258292 |
申请日期 |
2008.10.24 |
申请人 |
SAMSUNG LED CO., LTD. |
发明人 |
SONG SANG-YEOB;SHIM JI HYE;KIM BUM JOON |
分类号 |
H01L27/15;H01L33/06;H01L33/10;H01L33/14;H01L33/32 |
主分类号 |
H01L27/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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