发明名称 |
Integrated passive device substrates |
摘要 |
The specification describes an integrated passive device (IPD) that is formed on a silicon substrate covered with an oxide layer. Unwanted accumulated charge at the silicon/oxide interface are rendered immobile by creating trapping centers in the silicon surface. The trapping centers are produced by a polysilicon layer interposed between the silicon substrate and the oxide layer.
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申请公布号 |
US7936043(B2) |
申请公布日期 |
2011.05.03 |
申请号 |
US20060378106 |
申请日期 |
2006.03.17 |
申请人 |
SYCHIP INC. |
发明人 |
DEGANI YINON;FAN YU;GAO CHARLEY CHUNLEI;LAU MAUREEN;SUN KUNQUAN;SUN LIGUO |
分类号 |
H01L29/00 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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