| 发明名称 |
Lateral resurf NPN with high holding voltage for ESD applications |
| 摘要 |
In an ESD protection circuit an NPN BJT snapback device is provided with high breakdown voltage by including a RESURF region or by forming a PIN diode in the BJT. Holding voltage is increased by forming a sub-collector sinker region with the desired configuration.
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| 申请公布号 |
US7935605(B1) |
申请公布日期 |
2011.05.03 |
| 申请号 |
US20070906358 |
申请日期 |
2007.10.02 |
| 申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
VASHCHENKO VLADISLAV;HOPPER PETER J. |
| 分类号 |
H01L21/8222 |
主分类号 |
H01L21/8222 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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