| 摘要 |
PURPOSE: A substrate processing device and method are provided to include an injector which supplies an etching gas to the upper and lower areas of a chamber reaction space, thereby effectively eliminating coating films formed on the upper and lower areas of a chamber during dry cleaning. CONSTITUTION: A chamber(100) comprises a reaction space. A substrate mounting unit(200) mounts a substrate(10) in a chamber. A lower heating unit(400) heats the reaction space. A deposition gas injector(500) and a first etching gas injector spray a deposition gas and an etching gas to an upper part of the reaction space. A second etching gas injector sprays an etching gas to a lower part of the reaction space.
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