| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure wherein the loss of a metal film constituting a metal electrode can be prevented in a manufacturing process. SOLUTION: The semiconductor device includes a high-permittivity gate insulating film 2 formed of a high-permittivity insulating film, a metal film 3 formed on the high-permittivity gate insulating film 2, and a polysilicon film 4 formed on the metal film 3. The carbon content of a region 12 of a sidewall part of the metal film 3 is higher than that of the inside of the metal film 3. COPYRIGHT: (C)2011,JPO&INPIT
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