发明名称 |
FinFET Design with Reduced Current Crowding |
摘要 |
An integrated circuit structure includes a substrate and a fin field-effect transistor (FinFET). The FinFET includes a fin over the substrate and having a first fin portion and a second fin portion. A gate stack is formed on a top surface and sidewalls of the first fin portion. An epitaxial semiconductor layer has a first portion formed directly over the second fin portion, and a second portion formed on sidewalls of the second fin portion. A silicide layer is formed on the epitaxial semiconductor layer. A peripheral ratio of a total length of an effective silicide peripheral of the FinFET to a total length of a fin peripheral of the FinFET is greater than 1.
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申请公布号 |
US2011095378(A1) |
申请公布日期 |
2011.04.28 |
申请号 |
US20100842281 |
申请日期 |
2010.07.23 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD |
发明人 |
LEE TSUNG-LIN;YEH CHIH CHIEH |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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