| 摘要 |
1,111,991. Semi-conductor devices. NATIONAL RESEARCH DEVELOPMENT CORPORATION. 24 Feb., 1966 [25 Feb., 1965], No. 8236/65. Heading H1K, A PN junction in an A m B v compound semiconductor body is protected by an epitaxial layer of semi-insulating material produced by diffusion into the body or vapour deposition on it. In a typical case the material is deposited on a transistor zone structure formed by oxide masking technique after removal of the oxide, contacts being made to the zones by alloying through the material. Alternatively a layer of intrinsic gallium arsenide is epitaxially deposited on a doped body of the same material and a buried PN junction formed by alloying through the intrinsic layer. The use of gallium phosphide to protect PN junctions in gallium phosphide is also suggested. |
