| 摘要 |
PROBLEM TO BE SOLVED: To provide a process chamber to endure high-temperature and low-pressure processes and to improve wafer temperature uniformity and gas flow performance. SOLUTION: The chamber has a vertical lenticular cross section with a wide horizontal dimension and a short vertical dimension between convex upper and lower walls 12, 14. A central horizontal support plate 40 is provided between two lateral side rails 16, 18. The support plate segregates the process chamber into an upper region and a lower region 66, 68, with a purge gas being introduced through a lower tube into the lower region to prevent an unwanted deposition therein. A temperature compensation ring surrounds a susceptor and is formed with a material to absorb heat with higher efficiency than a chamber wall. A gas injector includes a plurality of independently controlled channels disposed laterally across the chamber, and the channels are merged into one at an outlet of the injector to allow mixing of adjacent longitudinal edges of separate flows well before reaching a wafer. COPYRIGHT: (C)2011,JPO&INPIT |
