| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor crystal substrate having a low defect density which can be applied to a semiconductor device, and to provide a method for producing the same. SOLUTION: A method for producing a compound single crystal includes growing a compound single crystal composed of two types of elements A and B by epitaxial growth on a single crystal substrate, in which the cubic ä001} face is used as a surface. The method includes the step (I) of growing the compound single crystal while causing an anti-phase boundary and a stacking fault to equivalently occur in a <110> direction parallel to the surface, the stacking fault being attributable to the elements A and B; the step (II) of merging and annihilating the stacking fault attributable to the element A which occurs in the step (I) with the anti-phase boundary; the step (III) of vanishing the stacking fault attributable to the element B which occurs in the step (I); and the step (IV) of completely merging and annihilating the anti-phase boundary. The step (IV) is carried out simultaneously with the steps (II) and (III) or after the steps (II) and (III). COPYRIGHT: (C)2011,JPO&INPIT |
