发明名称 ERROR DETECTION/CORRECTION BASED MEMORY MANAGEMENT
摘要 The present disclosure includes methods, devices, and systems for error detection/correction based memory management. One embodiment includes performing a read operation with respect to a particular group of memory cells of a memory device and, if the read operation results in an uncorrectable error, determining whether to retire the particular group of memory cells in response to a status of an indicator corresponding to the particular group of memory cells, wherein the status of the indicator indicates whether the particular group of memory cells has a previous uncorrectable error associated therewith.
申请公布号 US2011099458(A1) 申请公布日期 2011.04.28
申请号 US20090606486 申请日期 2009.10.27
申请人 MICRON TECHNOLOGY, INC. 发明人 RECHE CORY;NEVILL LEE;MARTIN TIM
分类号 G06F11/07;G06F11/10;G06F12/00;H03M13/05 主分类号 G06F11/07
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