发明名称 GATE VALVE, VACUUM TREATMENT APPARATUS, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To surely prevent a leak between a first treatment chamber and a second treatment chamber via a gate valve by an extremely simple structure in which the gate valve has a two-step seal structure. SOLUTION: The gate valve is composed of a valve box 42 provided with a gate opening part and a valve body 45 opening and closing the gate opening part, and has a structure where, when the valve body 45 is moved and the gate opening part of the valve box 42 is closed, the gate opening part is intercepted by a phenomenon that a seal face 51a (51b) as the circumferential edge face of the valve body 45 faces a seal bearing surface 64a (64b) provided along the gate opening part of the valve box 42. A seal member is provided over the whole circumference between the seal face 51a (51b) and the seal bearing surface 64a (64b), and, in the seal member 53, the central part in a direction orthogonal to the moving direction of a slide is formed in a recessed part recessed to the side of the seal face 64a(64b) than both the side parts, thus the seal member 53 itself has a two-step seal structure. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011084788(A) 申请公布日期 2011.04.28
申请号 JP20090239720 申请日期 2009.10.16
申请人 SHARP CORP 发明人 NOZAKI JUNICHI;KISHIMOTO KATSUSHI
分类号 C23C16/44;B01J3/02;C23C16/54;H01L21/3065 主分类号 C23C16/44
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