发明名称 |
Method of Manufacturing the Semiconductor Device |
摘要 |
A method of manufacturing semiconductor device includes preparing a substrate having a first surface and a second surface opposite to the first surface. A first insulation layer is formed on the second surface. A sacrificial layer is formed on the first insulation layer. An opening is formed to penetrate through the substrate and extend from the first surface to a portion of the sacrificial layer. A second insulation layer is formed on an inner wall of the opening. A plug is formed to fill the opening. The sacrificial layer is removed to expose a lower portion of the plug through the second surface.
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申请公布号 |
US2011097891(A1) |
申请公布日期 |
2011.04.28 |
申请号 |
US20100906578 |
申请日期 |
2010.10.18 |
申请人 |
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发明人 |
LEE KYU-HA;YOON MIN-SEUNG;LEE UI-HYOUNG;CHOI JU-IL;KIM NAM-SEOG;MA KEUM-HEE |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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