| 摘要 |
Disclosed is a semiconductor device which includes: a lead frame, which has the front surface and the rear surface, said front surface being composed of Cu; a semiconductor chip, which has the front surface and the rear surface, includes a Cu layer that forms the rear surface, and has the rear surface disposed such that the rear surface faces the front surface of the lead frame; and a bonding layer disposed between the lead frame and the semiconductor chip. The bonding layer has a multilayer structure which includes: a Bi-based material layer; and a Cu alloy layer, which sandwiches the Bi-based material layer from both the sides in the direction wherein the lead frame and the semiconductor chip face each other, and which does not contain Pb. |
