发明名称 A MEMORY CELL THAT INCLUDES A CARBON-BASED REVERSIBLE RESISTANCE SWITCHING ELEMENT COMPATIBLE WITH A STEERING ELEMENT, AND METHODS OF FORMING THE SAME
摘要 <p>Memory cells, and methods of forming such memory cells, are provided that include a steering element (14) coupled to a carbon-based reversible resistivity switching material (12) that has an increased resistivity, and a switching current that is less than a maximum current capability of the steering element used to control current flow through the carbon -based reversible resistivity switching material. In particular embodiments, methods and apparatus in accordance with this invention form a steering element, such as a diode, having a first width, coupled to a reversible resistivity switching material, such as aC, having a second width smaller than the first width.</p>
申请公布号 WO2011049829(A1) 申请公布日期 2011.04.28
申请号 WO2010US52855 申请日期 2010.10.15
申请人 SANDISK 3D, LLC;XU, HUIWEN;PING, ER-XUAN;COSTA, XIYING 发明人 XU, HUIWEN;PING, ER-XUAN;COSTA, XIYING
分类号 H01L27/24;H01L21/3213;H01L45/00 主分类号 H01L27/24
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