发明名称 |
A MEMORY CELL THAT INCLUDES A CARBON-BASED REVERSIBLE RESISTANCE SWITCHING ELEMENT COMPATIBLE WITH A STEERING ELEMENT, AND METHODS OF FORMING THE SAME |
摘要 |
<p>Memory cells, and methods of forming such memory cells, are provided that include a steering element (14) coupled to a carbon-based reversible resistivity switching material (12) that has an increased resistivity, and a switching current that is less than a maximum current capability of the steering element used to control current flow through the carbon -based reversible resistivity switching material. In particular embodiments, methods and apparatus in accordance with this invention form a steering element, such as a diode, having a first width, coupled to a reversible resistivity switching material, such as aC, having a second width smaller than the first width.</p> |
申请公布号 |
WO2011049829(A1) |
申请公布日期 |
2011.04.28 |
申请号 |
WO2010US52855 |
申请日期 |
2010.10.15 |
申请人 |
SANDISK 3D, LLC;XU, HUIWEN;PING, ER-XUAN;COSTA, XIYING |
发明人 |
XU, HUIWEN;PING, ER-XUAN;COSTA, XIYING |
分类号 |
H01L27/24;H01L21/3213;H01L45/00 |
主分类号 |
H01L27/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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