| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element capable of improving a bonding force between layers positioned in the lower part of a light emitting structure including a compound semiconductor layer, and to provide a method for manufacturing the semiconductor light emitting element. <P>SOLUTION: The semiconductor light emitting element includes: a bonding layer; an electrode layer disposed on the bonding layer; an ohmic layer disposed on the electrode layer; and a light emitting structure which is disposed on the ohmic layer and includes a first conductivity-type semiconductor layer, an active layer disposed on the first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer disposed on the active layer. The element further includes: a capping layer disposed on the bonding layer; and a channel layer which is disposed on the capping layer, and extends along the circumference of the lower surface of the light emitting structure. <P>COPYRIGHT: (C)2011,JPO&INPIT |
