| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion element which has superior durability and high photoelectric conversion efficiency. <P>SOLUTION: A photoelectric conversion element 1 includes p-type silicon layer 20 and an n-type oxide semiconductor layer 30 laminated therewith. The p-type silicon layer has one or more types of layers selected from among the group of a single crystalline p-type silicon layer, a polycrystalline p-type silicon layer and amorphous p-type silicon layer. The n-type oxide semiconductor layer has one or more types of layers selected from between a polycrystalline oxide semiconductor layer and an amorphous oxide semiconductor layer. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
