| 摘要 |
<p>Disclosed are a method and a furnace for melting a silicon raw material or a silicon-based alloy raw material, wherein the raw material is heated by means of a heat generating body that generates heat with a current carried therein, and the raw material is melted in an inert atmosphere with an oxygen partial pressure of 1-1000 Pa. The material of a conventionally used heater is changed, and the silicon or the silicon-based alloy is melted in the furnace which does not need to be in a high-vacuum state. Inclusion of impurities is eliminated by changing the material of the heater, an insulating material and the like as needed. Thus, a single crystalline or polycrystalline silicon or a silicon-based alloy can be manufactured at low cost.</p> |
