| 摘要 |
PROBLEM TO BE SOLVED: To provide a stacked semiconductor device featuring high connection reliability by preventing occurrence of connection failures between semiconductor devices. SOLUTION: This semiconductor device is equipped with: a first semiconductor device 20; and a second semiconductor device 30 stacked on the first semiconductor device 20. The first semiconductor device 20 has: a first wiring substrate 21; a first semiconductor element 23 arranged on the top surface of the first wiring substrate 21; a first electrode 25 arranged on the top surface of the first wiring substrate 21; and an insulating layer 29 having an opening 29a that exposes part of the first electrode 25. The second semiconductor device 30 has: a second wiring substrate 31; a second semiconductor element 33 arranged on the top surface of the second wiring substrate 31; a second electrode 35 arranged on the bottom surface of the second wiring substrate 31; and an inter-device connection terminal 37 connected with the second electrode 35. The area of the exposed part from the opening 29a of the first electrode 25 is smaller than that of the opening 29a. COPYRIGHT: (C)2011,JPO&INPIT |
