A MEMORY CELL THAT INCLUDES A CARBON-BASED REVERSIBLE RESISTANCE SWITCHING ELEMENT COMPATIBLE WITH A STEERING ELEMENT, AND METHODS OF FORMING THE SAME

摘要

Memory cells, and methods of forming such memory cells, are provided that include a steering element (14) coupled to a carbon-based reversible resistivity switching material (12) that has an increased resistivity, and a switching current that is less than a maximum current capability of the steering element used to control current flow through the carbon -based reversible resistivity switching material. In particular embodiments, methods and apparatus in accordance with this invention form a steering element, such as a diode, having a first cross - sectional area, coupled to a reversible resistivity switching material, such as aC, having a region that has a second cross - sectional area smaller than the first cross - sectional area.