| 摘要 |
PROBLEM TO BE SOLVED: To prevent the deterioration of a short channel effect caused by secondary channelling form a source-drain region deeply, and to reduce junction leakage, in an MISFET having a thin side wall spacer. SOLUTION: A method includes: a first step of injecting a first impurity of first conductivity to a region including a source-drain region of the first conductivity having an upraised structure on condition that a concentration peak is located in a position deeper than an interface between a silicide and a semiconductor substrate at a concentration of 1E14 atoms/cm<SP>2</SP>or lower; a second step of injecting a second impurity of the first conductivity with a mass lighter than that of the first impurity to a region including the source-drain region of the first conductivity on condition that the peak comes to a position shallower than the peak position of the first impurity concentration; and a third step of applying high-temperature millisecond annealing to the semiconductor substrate after the first and second steps. COPYRIGHT: (C)2011,JPO&INPIT
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