FILM-FORMING COMPOSITION CONTAINING SILICON COMPOUND

摘要

Provided is a film-forming composition which contains a silicon compound (A) having a partial structure represented by general formula (1) and which attains excellent flatness. Specifically provided is a composition which is intended to be used in a process for the formation of a pattern by nanoimprint lithography and which can form a resist upper-layer film by thermal firing and/or light irradiation on a resist for nanoimprining. In general formula (1), R1s are each C1-10 alkyl, C6-20 aryl, or a combination of the same; R2 is a polymerizable organic group; and n1 is an integer of 1 to 10.