发明名称 TRENCH SUBSTRATE AND METHOD OF FABRICATING THE SAME
摘要 Disclosed is a trench substrate, which includes a first insulating layer having trenches formed therein, a second insulating layer disposed on a lower surface of the first insulating layer and having laser processability inferior to that of the first insulating layer, and a negative pattern formed in the trenches, and in which the second insulating layer having laser processability inferior to that of the first insulating layer functions as a stopper, so that the trenches having the same shape are formed in the first insulating layer, thus enabling the formation of a fine and uniform circuit pattern. A method of fabricating the trench substrate is also provided.
申请公布号 US2011097553(A1) 申请公布日期 2011.04.28
申请号 US20090631624 申请日期 2009.12.04
申请人 HONG JONG KUK;CHO SOON JIN;HWANG SUN UK 发明人 HONG JONG KUK;CHO SOON JIN;HWANG SUN UK
分类号 H05K1/03;B32B3/30;H05K3/00 主分类号 H05K1/03
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