发明名称 METHOD FOR FORMING ZIRCONIA FILM
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for forming a zirconia film wherein good film quality can be achieved by an aerosolized gas deposition method. <P>SOLUTION: Specifically disclosed is a method for forming a yttria-containing stabilized zirconia film by an aerosolized gas deposition method, wherein zirconia fine particles P having an average particle diameter of not less than 1 &mu;m but not more than 5 &mu;m and a specific surface area of not less than 1 m<SP>2</SP>/g but not more than 4 m<SP>2</SP>/g are contained in a hermetically sealed container 2; an aerosol A of the zirconia fine particles P is formed by introducing a gas into the hermetically sealed container 2; an aerosol A of the zirconia fine particles P is conveyed into a film formation chamber 3, where is maintained at a pressure lower than that of the hermetically sealed container 2, through a conveying pipe 6 that is connected to the hermetically sealed container 2, so that the zirconia fine particles P are deposited on a substrate S that is contained in the film formation chamber 3. By using zirconia fine particles satisfying the above-described conditions, a dense zirconia thin film having high adhesion to a substrate can be formed. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011084787(A) 申请公布日期 2011.04.28
申请号 JP20090239654 申请日期 2009.10.16
申请人 FUCHITA NANO GIKEN:KK 发明人 FUCHIDA HIDETSUGU
分类号 C23C24/04;C03C17/23;C04B35/48;C04B41/87 主分类号 C23C24/04
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