SEMICONDUCTOR DEVICE INCLUDING METAL SILICIDE LAYER AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device including a metal silicide layer and a method for manufacturing the semiconductor device.

SOLUTION: Disclosed is the device formed from the method of fabricating a fine metal silicide layer having a uniform thickness regardless of substrate doping. A planar vacancy is created by the separation of an amorphousized surface layer of a silicon substrate from an insulating layer. A metal source enters the vacancy via a contact hole through the insulating layer connecting with the vacancy, and a heat treatment converts the metal in the vacancy into metal silicide. The separation is induced by converting the amorphous silicon into crystalline silicon.

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