| 摘要 |
PROBLEM TO BE SOLVED: To provide a material for an organic thin film transistor insulating layer, capable of forming a crosslinked structure without requiring a high-temperature treatment, and of enabling an organic thin-film transistor to have a threshold voltage (Vth) of a small absolute value, when used for the formation of a gate insulating layer. SOLUTION: The material for the organic thin-film transistor insulating layer contains a polymer compound that has a repeating unit, having a group containing a fluorine atom and a repeating unit having a photodimerization-reactive group. Preferable examples of the group containing a fluorine atom include aryl groups, in which a hydrogen atom is substituted by a fluorine atom and alkylaryl groups in which a hydrogen atom is substituted by a fluorine atom, and particularly preferable examples are a phenyl group in which a hydrogen atom is substituted by a fluorine atom and an alkylphenyl group in which a hydrogen atom is substituted by a fluorine atom. Preferable examples of the photodimerization-reactive group include aryl groups in which a hydrogen atom is substituted by a halomethyl group, and a particularly preferable example is a phenyl group in which a hydrogen atom is substituted by a halomethyl group. COPYRIGHT: (C)2011,JPO&INPIT
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