METHOD FOR PRODUCING SEMICONDUCTOR COMPONENTS USING DOPING TECHNIQUES
摘要
The invention relates to a method for producing semiconductor components using doping techniques, wherein during processing a sequence of layers is created which are to be positioned exactly with respect to each other. According to the invention, a selectively doped structure created in the semiconductor substrate is determined in the position thereof in the substrate using an infrared-sensitive camera device, and the position located in this way is directly or indirectly used to adjust the subsequent processing step.
申请公布号
WO2010099998(A3)
申请公布日期
2011.04.28
申请号
WO2010EP50765
申请日期
2010.01.25
申请人
ROBERT BOSCH GMBH;WUETHERICH, TOBIAS;WEIS, MATHIAS;LOSSEN, JAN;MEYER, KARSTEN