发明名称 IMPURITY IMPLANTATION METHOD, AND ION IMPLANTATION DEVICE
摘要 PROBLEM TO BE SOLVED: To control variations in a dose and an implantation depth of ion implantation resulting from a mismatch between an ion beam shape and a scan pitch. SOLUTION: The ion implantation device includes a defocusing section 205. The defocusing section 205 includes a convergent lens 206 for converging an ion beam 200 and a divergent lens 207 which enlarges the ion beam 200 converged by the convergent lens 206 by diverging it. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011086643(A) 申请公布日期 2011.04.28
申请号 JP20090235880 申请日期 2009.10.13
申请人 PANASONIC CORP 发明人 YONEDA KENJI;KUBO HIROKO
分类号 H01L21/265;H01J37/317;H01L27/146 主分类号 H01L21/265
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