发明名称 |
Method of Forming a Topside Contact to a Backside Terminal of a Semiconductor Device |
摘要 |
A process for forming a vertically conducting semiconductor device includes providing a semiconductor substrate having a topside surface and a backside surface. The semiconductor substrate serves as a terminal of the vertically conducting device for biasing the vertically conducting device during operation. The process also includes forming an epitaxial layer extending over the topside surface of the semiconductor substrate but terminating prior to reaching an edge of the semiconductor substrate so as to form a recessed region along a periphery of the semiconductor substrate. The method also includes forming an interconnect layer extending into the recessed region but terminating prior to reaching an edge of the semiconductor substrate. The interconnect layer electrically contacts the topside surface of the semiconductor substrate in the recessed region to thereby provide a topside contact to the semiconductor substrate.
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申请公布号 |
US2011097894(A1) |
申请公布日期 |
2011.04.28 |
申请号 |
US20100982509 |
申请日期 |
2010.12.30 |
申请人 |
ANDREWS JOHN T;YILMAZ HAMZA;MARCHANT BRUCE;HO IHSIU |
发明人 |
ANDREWS JOHN T.;YILMAZ HAMZA;MARCHANT BRUCE;HO IHSIU |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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地址 |
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