发明名称 |
ESD/ANTENNA DIODES FOR THROUGH-SILICON VIAS |
摘要 |
Roughly described, an antenna diode is formed at least partially within the exclusion zone around a TSV, and is connected to the TSV by way of a metal 1 layer conductor at the same time that the TSV is connected to either the gate poly or a diffusion region of one or more transistors placed outside the exclusion zone. |
申请公布号 |
US2011095367(A1) |
申请公布日期 |
2011.04.28 |
申请号 |
US20090605102 |
申请日期 |
2009.10.23 |
申请人 |
SYNOPSYS, INC. |
发明人 |
SU QING;NI MIN;TANG ZONGWU;KAWA JAMIL;SPROCH JAMES D. |
分类号 |
H01L27/06;G06F17/50;H01L21/336 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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