发明名称 |
Method of Improving Minority Lifetime in Silicon Channel and Products Thereof |
摘要 |
Performance of field effect transistors and other channel dependent devices formed on a monocrystalline substrate is improved by carrying out a high temperature anneal in a nitrogen releasing atmosphere while the substrate is coated by a sacrificial oxide coating containing easily diffusible atoms that can form negatively charged ions and can diffuse deep into the substrate. In one embodiment, the easily diffusible atoms comprise at least 5% by atomic concentration of chlorine atoms in the sacrificial oxide coating and the nitrogen releasing atmosphere includes NO. The high temperature anneal is carried out for less than 10 hours at a temperature less than 1100° C.
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申请公布号 |
US2011095344(A1) |
申请公布日期 |
2011.04.28 |
申请号 |
US20100940507 |
申请日期 |
2010.11.05 |
申请人 |
DONG ZHONG;CHEN CHING-HWA |
发明人 |
DONG ZHONG;CHEN CHING-HWA |
分类号 |
H01L29/772 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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