发明名称 |
CREATING EXTREMELY THIN SEMICONDUCTOR-ON-INSULATOR (ETSOI) HAVING SUBSTANTIALLY UNIFORM THICKNESS |
摘要 |
An extremely thin semiconductor-on-insulator (ETSOI) wafer is created having a substantially uniform thickness by measuring a semiconductor layer thickness at a plurality of selected points on a wafer; determining a removal thickness to be removed at each of the plurality of selected points such that removal of the removal thickness results in a substantially uniform within-wafer semiconductor layer thickness; implanting a species into the wafer at each of the plurality of selected points with at least one of a dose level and an energy level based on the removal thickness for the respective point; and polishing the semiconductor layer to thin the semiconductor layer. |
申请公布号 |
US2011095393(A1) |
申请公布日期 |
2011.04.28 |
申请号 |
US20090603668 |
申请日期 |
2009.10.22 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BERLINER NATHANIEL C.;CHENG KANGGUO;CUMMINGS JASON E.;FURUKAWA TOSHIHARU;RANKIN JED H.;ROBISON ROBERT R.;TONTI WILLIAM R. |
分类号 |
H01L29/06;C23F1/08;H01L21/66 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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