| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor that can improve controllability of an implantation amount of impurities while suppressing the positional shift of a low-concentration impurity region. SOLUTION: In the method of manufacturing the thin film transistor, a first step portion 12a is formed on the upper surface of a gate insulating film 12 by etching the upper surface of the gate insulating film 12 using a gate electrode 13b as a mask, a first step upper surface portion 12c positioned on the upper surface side of the first step part 12a is exposed by etching the upper surface and the side face of the gate electrode 13b without using the mask, and the impurities are implanted once into a semiconductor layer 11 using the etched gate electrode 13b as a mask through the exposed first step upper surface portion 12c and a first step lower surface portion 12b positioned on the lower surface side of the first step portion 12a, so that two kinds of a first LDD region 11d and a second LDD region 11e differing in impurity concentration are formed at the same time. COPYRIGHT: (C)2011,JPO&INPIT
|
