发明名称 |
METHOD OF FABRICATING CMOS TRANSISTOR |
摘要 |
A method of fabricating a CMOS transistor includes forming strained channels by re-crystallized amorphous polysilicon with the tensile film or the compressive film during annealing. C or Ge ions are optionally used to form solid-phase epitaxy to amplify the stress in the strained channel. Therefore, the charge carrier mobility in a CMOS transistor is improved.
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申请公布号 |
US2011097859(A1) |
申请公布日期 |
2011.04.28 |
申请号 |
US20090605377 |
申请日期 |
2009.10.26 |
申请人 |
CHIANG WEN-TAI;TSAI CHEN-HUA;TSAI CHENG-TZUNG;LIU PO-WEI |
发明人 |
CHIANG WEN-TAI;TSAI CHEN-HUA;TSAI CHENG-TZUNG;LIU PO-WEI |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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