发明名称 PROGRESSIVE TRIMMING METHOD
摘要 The invention provides a method of trimming a structure that includes a first wafer bonded to a second wafer, with the first wafer having a chamfered edge. The method includes a first trimming step carried out over a first depth that includes at least the thickness of the first wafer and over a first width determined from the edge of the first wafer. A second trimming step is then carried out over a second depth that includes at least the thickness of the first wafer and over a second width that is less than the first width.
申请公布号 US2011097874(A1) 申请公布日期 2011.04.28
申请号 US20090934026 申请日期 2009.07.31
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 BROEKAART MARCEL;MIGETTE MARION;MOLINARI SEBASTIAN;NEYRET ERIC
分类号 H01L21/304;B24B1/00;H01L21/306 主分类号 H01L21/304
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