发明名称 METHOD AND SYSTEM FOR DRYING A SUBSTRATE
摘要 A method and system is described for drying a thin film on a substrate following liquid immersion lithography. Drying the thin film to remove immersion liquid from the thin film is performed prior to baking the thin film, thereby reducing the likely hood for interaction of immersion liquid with the baking process. This interaction has been shown to cause non-uniformity in critical dimension for the pattern formed in the thin film following the developing process.
申请公布号 KR20110044333(A) 申请公布日期 2011.04.28
申请号 KR20117007545 申请日期 2004.07.08
申请人 TOKYO ELECTRON LIMITED 发明人 HO CHUNG PENG;NAFUS KATHLEEN;YOSHIOKA KAZ;YAMAGUCHI RICHARD
分类号 H01L21/302;F26B;G02B21/00;G03C5/00;G03F7/20;G03F7/38;G21K5/08;G21K5/10 主分类号 H01L21/302
代理机构 代理人
主权项
地址
您可能感兴趣的专利