INSULATED GATE BIPOLAR TRANSISTOR AND METHOD FOR DESIGNING SAME

摘要

Disclosed is an insulated gate bipolar transistor which has a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type formed on the surface layer of the main surface side, a third semiconductor layer of the first conductivity type selectively formed on the surface layer of the second semiconductor layer, a fourth semiconductor layer of the second conductivity type formed on the surface layer of the undersurface side, and a fifth semiconductor layer of the first conductivity type formed between the first and fourth semiconductor layers and having a higher impurity concentration than the first semiconductor layer. A recombination centre lattice defect having a single density distribution peak is disposed in the first semiconductor layer so that the peak position is located within the width of the non-depletion region at the end of turn-off time.