| 摘要 |
<p>PURPOSE: A light emitting device and manufacturing method thereof are provided to reduce contact resistance by forming a pattern on the contact area of a first electrode, thereby increasing a current spreading effect. CONSTITUTION: A light emitting structure(110) comprises a first conductive semiconductor layer(112), an active layer(114), and a second conductive semiconductor layer(116). A second electrode(120) is formed under the second conductive semiconductor layer. A first pattern is formed on the first area of the first conductive semiconductor layer. An A electrode(150a) is formed on the first area of the first conductive semiconductor layer. An B electrode(150b) is formed on the second area of the first conductive semiconductor layer.</p> |
