| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor sensor which extends a sensing area of the semiconductor sensor and improves the detection accuracy. <P>SOLUTION: A sensitive film 4 is deposited on a silicon substrate 2 and formed with a sensing area 6 to which a to-be-detected object is attached. A P<SP>+</SP>diffusion layer (a P pocket) 7 is formed under the sensing area 6 in the sensitive film 4 within the silicon substrate 2. A N<SP>+</SP>diffusion layer 8 forms a P/N junction having a junction plane 50 facing the sensing area 6 between it and the P pocket 7. A P<SP>+</SP>diffusion layer 9 forms a source/drain along with the N<SP>+</SP>diffusion layer 8. A DC power supply 11 applies a reverse bias voltage between the P pocket 7 and the N<SP>+</SP>diffusion layer 8. A DC power supply 15 applies a voltage between the N<SP>+</SP>diffusion layer 8 and the P<SP>+</SP>diffusion layer 9 so as to flow a drain current corresponding to the quantity of the to-be-detected object attached to the sensing area 6. <P>COPYRIGHT: (C)2011,JPO&INPIT |
